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T1235-600G
HIGH PERFORMANCE TRIAC
FEATURES HIGH COMMUTATION (dI/dt)c > 6.5 A/ms without snubber HIGH STATIC dV/dt > 500 V/s DESCRIPTION The T1235-600G triac uses a high performance SNUBBERLESSTM technology. The part is intended for general purpose applications using surface mount technology.
A2
A2 A1
G
D2PAK
ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) ITSM Parameter Repetitive peak off-state voltage RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C) I t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current IG = 500 mA Tstg Tj Tl dIG /dt = 1 A/s. Non Repetitive Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s 100 - 40, + 150 - 40, + 125 260 C C
2
Value Tj = 125C Tc= 105C tp = 8.3ms tp = 10 ms 600 12 126 120 72 20
Unit V A A
It dI/dt
2
tp = 10 ms Repetitive F = 50 Hz
A2s A/s
January 1998 - Ed: 1D
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THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Parameter Junction to ambiant (S=1cm2) Junction to case for DC Junction to case for AC 360conduction angle (F=50Hz) Value 45 1.8 1.4 Unit C/W C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III MIN MAX VGT VGD IH * IL VD=12V (DC) RL=33 VD=VDRM RL=3.3k IT= 100mA IG = 1.2 IGT Gate open Tj= 25C Tj= 125C Tj= 25C Tj = 25C I-III II VTM * IDRM IRRM dV/dt * (dI/dt)c * ITM= 17A tp= 380s VD = VDRM VR = VRRM Linear slope up to VD=67%VDRM Gate open Without snubber Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C I-II-III I-II-III MAX MIN MAX MAX MAX MAX MAX MAX MIN MIN Sensitivity 2 35 1.3 0.2 35 50 80 1.5 5 2 500 6.5 V A mA V/s A/ms V V mA mA Unit mA IGM = 4 A (tp = 20 s)
* For either polarity of electrode A2 voltage with reference to electrode A1.
ORDERING INFORMATION
Add "-TR" suffix for Tape & Reel shipment
T 12
TRIAC CURRENT
2/5
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35 - 600
SENSITIVITY
G
PACKAGE : G = D2PAK VOLTAGE
T1235-600G
Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact.
P(W) 16
=180
Rth=6C/W Rth=4C/W Rth=2C/W Rth=0C/W
P(W) 16 14 12 10 8 6 4 2 0 0 2 4
=30 =60 =90 =120
Tcase (C)
14 12 10 8
105
110
115
6 4
120
=180
IT(RMS)(A) 6 8 10 12
2 0 0
Tamb(C)
125
20
40
60
80
100
120
140
Fig. 3: RMS on-state current versus case temperature.
Fig. 4: Relative variation of thermal impedance versus pulse duration.
IT(RMS)(A) 14 12 10 8
=180
K=[Zth/Rth] 1.00
Zth(j-c)
Zth(j-a)
0.10
6 4 2 0 0 25 Tcase( C) 50 75 100 125
0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2
Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature (typical values).
IGT,IH[Tj]/IGT,IH[Tj=25C] 2.5 2.0 1.5
IGT
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
ITSM(A) 120 100 80 60
Tj initial=25 C F=50Hz
1.0 0.5
IH
40 20 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 Number of cycles 10 100 1000
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T1235-600G
Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
ITSM(A),I t(A s) 500
ITSM Tj initial=25C
Fig. 8: On-state characteristics(maximum values).
ITM(A) 100
Tj max.: Vto=0.77V Rt=42 m
100
Tj=Tj max. It
10
Tj=25C
tp(ms) 10 1 2 5 10
VTM (V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 80 70
Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards.
T (C)
250
200
245C 215C
60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm )
0 100 150
Epoxy FR4 board
50
Metal-backed board
t (s)
28 32 36 40
0 40 80 120 160 200 240 280 320 360
16
20
24
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T1235-600G
PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF.
A E L2 C2
Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.30 2.49 0.03 0.70 1.40 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.181 0.106 0.009 0.037
A A1
D
L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R
A2 B B2 C C2 D E G L L2 L3 R V2
Note 1: Max resin gate protusion = 0.5 mm
FOOT PRINT DIMENSIONS (in millimeters)
16.90
MARKING : T1235 600G
10.30 1.30
5.08
3.70 8.90
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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